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| MMDT5401 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * Epitaxial Planar Die Construction Complementary NPN Type Available (MMDT 5551) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 NEW PRODUCT Dim A B BC C1 Min 0.10 1.15 2.00 0.30 1.80 3/4 0.90 0.25 0.10 Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 Mechanical Data * * * * * Case: SOT-363, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K4M Weight: 0.006 grams (approx.) E2 K J Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG MMDT5401 -160 -150 -5.0 -200 200 625 -55 to +150 Unit V V V mA mW K/W C Characteristic Collector Current - Continuous (Note 1) Power Dissipation (Note 1, 2) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Maximum combined dissipation. DS30169 Rev. C-1 1 of 2 KXX B2 KXX C D F H J M 0.65 Nominal H K L M D F L All Dimensions in mm MMDT5401 NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Base- Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Small Signal Current Gain Current Gain-Bandwidth Product Noise Figure @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -160 -150 -5.0 3/4 3/4 50 60 50 3/4 3/4 3/4 40 100 3/4 Max 3/4 3/4 3/4 -50 -50 3/4 240 3/4 -0.2 -0.5 -1.0 Unit V V V nA mA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCB = -120V, IE = 0 VCB = -120V, IE = 0, TA = 100C VEB = -3.0V, IC = 0 IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V IC = -50mA, VCE = -5.0V IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -50mA, IB = -5.0mA VCB = -10V, f = 1.0MHz, IE = 0 VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -10mA, f = 100MHz VCE = -5.0V, IC = -200mA, RS = 10W, f = 1.0kHz hFE VCE(SAT) VBE(SAT) 3/4 V V Cobo hfe fT NF 6.0 200 300 8.0 pF 3/4 MHz dB Notes: 3. Pulse test: Pulse width 300ms, duty cycle 2%. DS30169 Rev. C-1 2 of 2 MMDT5401 |
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